Morgan Advanced Ceramics Performance SiC Technical Ceramic

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Morgan Advanced Ceramics Performance SiC Technical Ceramic
Categories:	Ceramic
Material Notes:	Ultra Pure SiC (Silicon Carbide) is made via a chemical vapour deposition (CVD) process, a method that produces very uniform material. The combination of excellent thermal, electrical and chemical properties makes CVD SiC well suited to many semiconductor, LED, and optical applications. Applications: Rapid Thermal Process (RTP) components Plasma Etch components Susceptors and Heating elements LED wafer carriers and cover plates Sputtering Targets information provided by Morgan Advanced Materials
Key Words:	Technical Ceramic
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Physical Properties	Metric	English	Comments

Bulk Density	3.21 g/cc	0.116 lb/in³

Mechanical Properties	Metric	English	Comments
Hardness, Vickers	2800	2800	ASTM C1327
Flexural Strength	370 MPa @Temperature 20.0 °C	53700 psi @Temperature 68.0 °F	ASTM C1161
	560 MPa @Temperature 1300 °C	81200 psi @Temperature 2370 °F	ASTM C1161
Fracture Toughness	2.94 MPa-m½	2.68 ksi-in½	Vickers Indentation

Electrical Properties	Metric	English	Comments
Electrical Resistivity	>= 0.100 ohm-cm @Temperature 20.0 °C	>= 0.100 ohm-cm @Temperature 68.0 °F	Performance ELR SiC
	<= 1.00 ohm-cm @Temperature 20.0 °C	<= 1.00 ohm-cm @Temperature 68.0 °F	Performance SiC

Thermal Properties	Metric	English	Comments
CTE, linear	4.50 µm/m-°C @Temperature -40.0 - 950 °C	2.50 µin/in-°F @Temperature -40.0 - 1740 °F	ASTM E228
Specific Heat Capacity	0.660 J/g-°C	0.158 BTU/lb-°F
Thermal Conductivity	220 W/m-K @Temperature 20.0 °C	1530 BTU-in/hr-ft²-°F @Temperature 68.0 °F	Performance ELR SiC; ASTM E1461
	250 W/m-K @Temperature 20.0 °C	1740 BTU-in/hr-ft²-°F @Temperature 68.0 °F	Performance SiC; ASTM E1461

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CMORF8047 / 203524

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