ED-H ingots are manufactured from high-purity SiCl4 in a VAD process. ED-H ingots have a typical purity that exceeds the detection limit of 10ppb in all elements, and are virtually free of bubbles and inclusions. Thanks to an OH content less than 100ppm, ED-H material exhibits superior transmission characteristics in the deep UV and is a material of choice for VUV applications down to 170nm. Features: Good homogeneity with 3D striae free Application: : High precision optics Information provided by Tosh Corporation |