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Gallium Arsenide, GaAs
Categories: Ceramic; Phosphide/Pnictide; Other Engineering Material; Semiconductor

Key Words: Pnictide; Semiconductor; Arsenic
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Physical PropertiesOriginal ValueComments
Density 5.316 g/cc
a Lattice Constant 5.65315 Å
Molecular Weight 144.645 g/mol
Volume Compressibility, 10^-10 m²/N 0.771
 
Mechanical PropertiesOriginal ValueComments
Knoop Microhardness 7500N/mm²
 
Electrical PropertiesOriginal ValueComments
Electrical Resistivity 1.00e+7 ohm-cm
Magnetic Susceptibility -0.0000162Atomic (cgs)
Dielectric Constant 13.2
Band Gap 1.35 eV
Electron Mobility, cm²/V-s 8800
Hole Mobility, cm²/V-s 400
 
Thermal PropertiesOriginal ValueComments
CTE, linear 5.40 µm/m-°C
@Temperature 20.0 °C
 7.97 µm/m-°C
@Temperature 1238 °C
Specific Heat Capacity 0.325 J/g-°C
Thermal Conductivity 50.0 W/m-K
Melting Point 1237 °C
Heat of Formation 535 kJ/mol
Debye Temperature 71.0 °C
 
Optical PropertiesOriginal ValueComments
Refractive Index 3.309
 
Descriptive Properties
CAS Number1303-00-0
ColorGray
Crystal StructureCubicSphalerite Structure - Space Group F(-4)3m

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