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Ensinger PEI

Gallium Arsenide, GaAs
Categories: Ceramic; Phosphide/Pnictide; Other Engineering Material; Semiconductor

Key Words: Pnictide; Semiconductor; Arsenic
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Physical PropertiesMetricEnglishComments
Density 5.316 g/cc0.1921 lb/in³
a Lattice Constant 5.65315 Å5.65315 Å
Molecular Weight 144.645 g/mol144.645 g/mol
Volume Compressibility, 10^-10 m²/N 0.7710.771
 
Mechanical PropertiesMetricEnglishComments
Knoop Microhardness 75007500N/mm²
 
Electrical PropertiesMetricEnglishComments
Electrical Resistivity 1.00e+7 ohm-cm1.00e+7 ohm-cm
Magnetic Susceptibility -0.0000162-0.0000162Atomic (cgs)
Dielectric Constant 13.213.2
Band Gap 1.35 eV1.35 eV
Electron Mobility, cm²/V-s 88008800
Hole Mobility, cm²/V-s 400400
 
Thermal PropertiesMetricEnglishComments
CTE, linear  5.40 µm/m-°C
@Temperature 20.0 °C
3.00 µin/in-°F
@Temperature 68.0 °F
 7.97 µm/m-°C
@Temperature 1238 °C
4.43 µin/in-°F
@Temperature 2260 °F
Specific Heat Capacity 0.325 J/g-°C0.0777 BTU/lb-°F
Thermal Conductivity 50.0 W/m-K347 BTU-in/hr-ft²-°F
Melting Point 1237 °C2259 °F
Heat of Formation 535 kJ/mol535 kJ/mol
Debye Temperature 71.0 °C160 °F
 
Optical PropertiesMetricEnglishComments
Refractive Index 3.3093.309
 
Descriptive Properties
CAS Number1303-00-0
ColorGray
Crystal StructureCubicSphalerite Structure - Space Group F(-4)3m

References for this datasheet.

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