· Transparency: > 97 %
· Coverage: > 95%
· Thickness (theoretical): 0.345 nm
· Hall Electron Mobility on Si3N4: 1432±428 cm2/Vs
· Sheet Resistance: 576±172 Ohms/sq (1cm x1cm)
· Grain size: Up to 20 µmApplication: Graphene research, Graphene transistors and electronic applications, Graphene optoelectronics, plasmonics and nanophotonics. Graphene photodetectors (measure photon flux or optical power), Biosensors and bioelectronics, Aerospace industry (electronics, thermal interface materials, etc.), MEMS and NEMS |