| Hermetically sealed semiconductor devices containing Gallium Arsenide (GaAs), RF absorbers and utilizing industry gate metallization structures have been shown to leak out hydrogen in ambient as well as environmental conditioning, which will poison and shorten the life of the device. CSPM manufactures and sells the hydrogen getter for the semiconductor industry, specifically designed for these types of devices. H2-3000 film is a unique getter, which employs an active hydrogen getter and desiccant for water absorption, dispersed in a flexible silicone polymer matrix. The high permeability of the polymer matrix to both hydrogen and moisture assures a rapid uptake of both gases. The getter operates through a reaction, which is irreversible for hydrogen. Therefore, there are no hazardous or problematic side effects, once absorbed gasses are trapped from harming the device. Properties: H2-3000 possesses high hydrogen and moisture gettering capacity, while being thermally stable up to 200°C. The material is a film and can therefore be molded or stamped to any desired shape. The excellent physical properties of the polymer allow the getter to remain flexible over the temperature range of –55°C to 150°C. As a result, no spalling or flaking occurs as the getter material removes hydrogen. The composition of the material is designed to maintain a dew point of less than –65°C, while maintaining a hydrogen atmosphere of less than 1 part per million within the device. Information provided by Cookson Electronics |
